note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: RC0161A doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1/ sdr 03 ____ ___ | | | | | | | | | | | | | | | | | | | | | screening 2 / ___ = not screened tx = tx level txv = txv level s = s level package s.22 = smd.22 voltage 40 = 400v 50 = 500v 60 = 600v current 03 = 3a sdr0360 series 3 amp, 30nsec smd hyperfast rectifier low forward voltage 400 - 600 volts features: ? hyper fast recovery: 30 nsec typical ? very low reverse leakage current ? low forward voltage ? low junction capacitance ? hermetically sealed package ? ultrasonic aluminum wire bonds ? tx, txv, and space level screening available consult factory. 2 / maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage sdr0340 sdr0350 sdr0360 v rrm v rwm v r 400 500 600 volts average rectified forward current (resistive load, 60 hz, sine wave, t a = 100 o c) i o 3 amps peak surge current (8.3 ms pulse, half sine wave, superimposed on i o , allow junction to reach equilibrium between pulses, t a = 25 o c) i fsm 60 amps operating and storage temperature t op & t stg -55 to +150 o c maximum thermal resistance junction to case r ? jc 15 o c/w notes: 1 / for ordering information, price, operating curves and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. smd.22 pin 1: cathode pin 2: anode pin 3: anode
note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: RC0161A doc electrical characteristics symbol typ max unit instantaneous forward voltage drop (t a = 25 o c, 300 ? sec pulse) i f = 1 a dc i f = 3 a dc v f1 v f2 1.04 1.24 1.2 1.5 v dc instantaneous forward voltage drop (t a = -55 o c, 300 ? sec pulse) i f = 1 a dc i f = 3 a dc v f3 v f4 1.13 1.32 1.35 1.60 v dc instantaneous forward voltage drop (t a = +100 o c, 300 ? sec pulse) i f = 1 a dc i f = 3 a dc v f5 v f6 0.91 1.13 - - v dc instantaneous forward voltage drop (t a = +125 o c, 300 ? sec pulse) i f = 1 a dc i f = 3 a dc v f7 v f8 0.87 1.10 1.10 1.40 v dc instantaneous forward voltage drop (t a = +150 o c, 300 ? sec pulse) i f = 1 a dc i f = 3 a dc v f9 v f10 0.83 1.07 - - v dc reverse leakage current (rated v r , 300 ? sec pulse minimum) t a = 25 o c t a = +100 o c t a = 125 o c t a = +150 o c i r1 i r2 i r3 i r4 0.05 2 5 15 10 - 50 - ua junction capacitance t a = 25 o c, f = 1 mhz v r =5v dc v r =10v dc c j1 c j2 10 8 - 20 pf reverse recovery time i f =1a dc , i r =1a dc , i r r =0.1a dc t rr1 65 - ns reverse recovery time i f =0.5a dc , i r =1a dc, i rr =0.25a dc t rr2 30 50 ns solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr0360 series
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